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Low-power write-once-read-many-times memory devices
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/content/aip/journal/apl/97/5/10.1063/1.3473775
2010-08-02
2014-07-31

Abstract

We introduce low-power write-once-read-many-times memory devicesfabricated from solution. These devices are based on an electron-only structure using colloidalZnOsemiconductornanoparticles and the doped conjugated polymer polyethylenedioxythiophene doped with polystyrene sulfonic acid (PEDOT:PSS). The conductive p-doped conjugated polymer is permanently dedoped by injected electrons, producing an insulating state. This demonstration provides a class of memory devices with the potential for extremely low-cost, low-power-consumption applications, such as radio-frequency identification tags.

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Scitation: Low-power write-once-read-many-times memory devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/5/10.1063/1.3473775
10.1063/1.3473775
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