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Low-power write-once-read-many-times memory devices
5.B. C. de Brito, E. Smiths, P. van Hal, T. Geuns, B. de Boer, C. Lasance, H. Gomes, and D. de Leeuw, Adv. Mater. (Weinheim, Ger.) 20, 3750 (2008).
12.P. -J. Chia, L. Chua, S. Sivaramakrishnan, J. Zhuo, L. Zhao, W. Sim, Y. Yeo, and P. Ho, Adv. Mater. (Weinheim, Ger.) 19, 4202 (2007).
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We introduce low-power write-once-read-many-times memory devicesfabricated from solution. These devices are based on an electron-only structure using colloidalZnOsemiconductornanoparticles and the doped conjugated polymer polyethylenedioxythiophene doped with polystyrene sulfonic acid (PEDOT:PSS). The conductive p-doped conjugated polymer is permanently dedoped by injected electrons, producing an insulating state. This demonstration provides a class of memory devices with the potential for extremely low-cost, low-power-consumption applications, such as radio-frequency identification tags.
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