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(a) Combined magnetic and atomic force microscopy images of the hybrid sample. The dark and bright stripes, corresponding to the different F domains, are shown only within the cross-shaped S bridge. White dashed lines depict the position of the DW’s. All elements of the electrical circuit are shown schematically. (b) The model S/F structure.
The -component of the field induced by the F domains, measured by a scanning Hall probe microscope along a line perpendicular to a DW at , and at height . The dashed line corresponds to .
Typical dependencies measured along the DW for different values. Both branches for and were measured starting from .
(a) Critical currents and as a function of at . The shaded areas correspond to the range where the decrease in the resistance from its normal value (i.e., RDS regime) was detected. Arrows indicate the compensation field . (b) Comparison between experiment (circles) and theory (solid lines).
(a) The formation of the vortex-free channel in the presence of the transport current , the reference system corresponds to Fig. 1. [(b) and (c)] Static vortex and current patterns in the S bridge in the presence of the nonuniform field arctan , corresponding to the maximum of the flowing current, for different values. V and AV stand for vortices and antivortices, and are the position and the width of the vortex-free channel, is the depairing current density. Since the right part of the S bridge at is in the normal state and and there. [(d)–(f)] The vortex and current distributions for .
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