1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Multiwavelength micro-Raman analysis of strain in nanopatterned ultrathin strained silicon-on-insulator
Rent:
Rent this article for
USD
10.1063/1.3475399
/content/aip/journal/apl/97/5/10.1063/1.3475399
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/5/10.1063/1.3475399

Figures

Image of FIG. 1.
FIG. 1.

(a) Cross-sectional TEM image of the strained- heterostructure used in this study. The strained Si layer was transferred onto Ge/Si substrate using the ion-cut process. The arrow indicates the bonding interface. Inset: high resolution TEM image and electron diffraction pattern of the strained Si layer. The lines in the high resolution TEM denote the penetration depth of each laser lines used in micro-Raman analysis. (b) Raman spectrum of the heterostructure shown in (a). The signal was recorded using a 488 nm laser. The vertical dashed line denotes the Si–Si peak position in bulk Si.

Image of FIG. 2.
FIG. 2.

UV-Raman Si–Si mode of the investigated SSOI nanostructures (squares). The peak of the unpatterned SSOI is also shown (circles). The vertical dashed line denotes the Si–Si peak position in bulk Si.

Image of FIG. 3.
FIG. 3.

488 nm Raman Si–Si mode of the investigated SSOI nanostructures (squares). The peak of the unpatterned SSOI is also shown (circles). The vertical dashed line denotes the Si–Si peak position in bulk Si.

Tables

Generic image for table
Table I.

Experimental values of in-plane strain (stress) components in % (MPa) estimated from deep UV and visible micro-Raman probes.

Loading

Article metrics loading...

/content/aip/journal/apl/97/5/10.1063/1.3475399
2010-08-02
2014-04-16
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Multiwavelength micro-Raman analysis of strain in nanopatterned ultrathin strained silicon-on-insulator
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/5/10.1063/1.3475399
10.1063/1.3475399
SEARCH_EXPAND_ITEM