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Suppression of boron–oxygen defects in p-type Czochralski silicon by germanium doping
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10.1063/1.3475486
/content/aip/journal/apl/97/5/10.1063/1.3475486
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/5/10.1063/1.3475486
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The normalized concentration of B–O defects as a function of illumination time at for the conventional CZ silicon and the GCZ silicon containing the Ge concentration of as well as the referenced Ga-doped CZ silicon.

Image of FIG. 2.
FIG. 2.

Reduction percentages of B–O defects in CZ silicon as a function of Ge concentration.

Image of FIG. 3.
FIG. 3.

Typical FTIR spectra measured at 10 K for the conventional CZ and GCZ silicon with a Ge concentration of .

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/content/aip/journal/apl/97/5/10.1063/1.3475486
2010-08-03
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Suppression of boron–oxygen defects in p-type Czochralski silicon by germanium doping
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/5/10.1063/1.3475486
10.1063/1.3475486
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