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The normalized concentration of B–O defects as a function of illumination time at for the conventional CZ silicon and the GCZ silicon containing the Ge concentration of as well as the referenced Ga-doped CZ silicon.
Reduction percentages of B–O defects in CZ silicon as a function of Ge concentration.
Typical FTIR spectra measured at 10 K for the conventional CZ and GCZ silicon with a Ge concentration of .
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