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Self-assembled GaAs islands on Si by droplet epitaxy
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View: Figures


Image of FIG. 1.
FIG. 1.

Panels (a) and (b): AFM broad area scans of sample B just after Ga deposition showing droplet formation on the bare Si(001) substrate (a) and after the arsenization step showing self-assembled GaAs islands (b) Panel (c) RHEED spotty pattern after As supply of sample D with weak [111] chevron pattern indicating the main faceting of the islands. Panel (d) SEM image of the self-assembled GaAs islands (sample B) grown by DE on Si substrate.

Image of FIG. 2.
FIG. 2.

(a) Density and average diameter size of the fabricated samples. The FWHM of the size distribution of each sample is reported as error bar. (b) Size distribution histogram of sample E (squares). The Gaussian fit to the experimental data is shown (line). (c) Dependence on the substrate temperature of the GaAs SAI density. The dashed line reports the fitted exponential law with .

Image of FIG. 3.
FIG. 3.

(a) TEM SAD pattern from a single SAI of sample A showing the (001) diffraction pattern of both Si (outer brightest spots) and GaAs (medium bright inner spots) as exemplified in the magnified inset of the (220) diffraction. (b) TEM image of a GaAs island on Si (sample E) with diffraction vector [220].


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Self-assembled GaAs islands on Si by droplet epitaxy