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Effect of cap polarization field on Cs-free GaN photocathode characteristics
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10.1063/1.3476341
/content/aip/journal/apl/97/5/10.1063/1.3476341
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/5/10.1063/1.3476341
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Simulated band diagram without polarization for the photocathode device designs with different cap thickness. Inset shows the simulation model of the device.

Image of FIG. 2.
FIG. 2.

Simulated band diagram with the effect of polarization included for the photocathode device designs with different cap thickness.

Image of FIG. 3.
FIG. 3.

Photoemission spectra for the four photocathode structures with different cap growth time. Inset shows the change in calculated threshold as a function of expected cap thickness.

Image of FIG. 4.
FIG. 4.

Change in peak QE as a function of cap thickness.

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/content/aip/journal/apl/97/5/10.1063/1.3476341
2010-08-06
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of n+GaN cap polarization field on Cs-free GaN photocathode characteristics
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/5/10.1063/1.3476341
10.1063/1.3476341
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