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Low dark current long-wave infrared InAs/GaSb superlattice detectors
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10.1063/1.3476342
/content/aip/journal/apl/97/5/10.1063/1.3476342
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/5/10.1063/1.3476342
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Dark current density curves for square mesas measured at a temperature of . Reduction in surface leakage by only changing the etch mechanism showed almost 100x improvement. The inset shows dark current curves for the same diode etched to two different depths using the plasma.

Image of FIG. 2.
FIG. 2.

at and 200 mV bias for different sized diodes. The linear fit of the plot is used to separate the leakage due to surface perimeter from the bulk. The inset is a plot of dark current density as a function of detector temperature.

Image of FIG. 3.
FIG. 3.

SEM pictures of the four different etched samples. The inset in each SEM picture provides the corresponding cross-section profile. Sidewall angles were measured to be 54.9°, 72.8°, 87.9°, and 81.1°.

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/content/aip/journal/apl/97/5/10.1063/1.3476342
2010-08-05
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low dark current long-wave infrared InAs/GaSb superlattice detectors
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/5/10.1063/1.3476342
10.1063/1.3476342
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