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Minority carrier lifetime in type-2 InAs–GaSb strained-layer superlattices and bulk HgCdTe materials
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10.1063/1.3476352
/content/aip/journal/apl/97/5/10.1063/1.3476352
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/5/10.1063/1.3476352
/content/aip/journal/apl/97/5/10.1063/1.3476352
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/content/aip/journal/apl/97/5/10.1063/1.3476352
2010-08-06
2014-11-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Minority carrier lifetime in type-2 InAs–GaSb strained-layer superlattices and bulk HgCdTe materials
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/5/10.1063/1.3476352
10.1063/1.3476352
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