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Minority carrier lifetime in type-2 InAs–GaSb strained-layer superlattices and bulk HgCdTe materials
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10.1063/1.3476352
/content/aip/journal/apl/97/5/10.1063/1.3476352
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/5/10.1063/1.3476352
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Absorption spectrum (solid line) and PL spectrum (dashed line) for the MWIR SLS structure at . (b) Modulation response data at various steady-state excitation levels for the MWIR SLS, the excitation area was . The inset shows the reciprocal carrier lifetime obtained from a fit of the PL response as a function of the excess carrier concentration. The minority carrier lifetime of 75 ns at zero excitation was determined at the intersection with the -axis.

Image of FIG. 2.
FIG. 2.

Modulation response data at various steady-state excitation levels for the LWIR SLS structure (a) and the MCT structure (b) at ; the excitation areas were and for the LWIR SLS and MCT structures, respectively. The insets show the reciprocal carrier lifetimes obtained from the PL response fitting as a function of the excess carrier concentration. The intersections with the -axis determined the minority carrier lifetimes, for LWIR SLS and for LWIR MCT.

Image of FIG. 3.
FIG. 3.

Schematic diagram of the carrier capture: , are the capture times for holes and electrons, ; is the concentration of neutral SRH centers; and is the emitted energy.

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/content/aip/journal/apl/97/5/10.1063/1.3476352
2010-08-06
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Minority carrier lifetime in type-2 InAs–GaSb strained-layer superlattices and bulk HgCdTe materials
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/5/10.1063/1.3476352
10.1063/1.3476352
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