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X-ray diffraction pattern of the ML. The inset (a) shows the RHEED patterns of the ML and the inset (b) is the HRTEM image of interface STO/LSMO.
hysteresis curves for the STO/LSMO/Si multilayer under different frequencies. The inset (a) shows the characteristics of the STO/LSMO/Si multilayer. Inset: contact configuration of the multilayer and the Indium electrodes of were placed on the surfaces of the film and substrate. The inset (b) is the frequency dependence of the hysteresis memory window.
hysteresis memory window for the STO/LSMO/Si multilayer under 100 Hz and 50 KHz, respectively. The inset shows Nyquist plot for the STO/LSMO/Si multilayer in the backward bias region.
The band diagrams for the sample under forward bias (a) and backward bias condition (b).
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