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Effect of polarization-memory in multilayer on Si substrate
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10.1063/1.3476358
/content/aip/journal/apl/97/5/10.1063/1.3476358
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/5/10.1063/1.3476358
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

X-ray diffraction pattern of the ML. The inset (a) shows the RHEED patterns of the ML and the inset (b) is the HRTEM image of interface STO/LSMO.

Image of FIG. 2.
FIG. 2.

hysteresis curves for the STO/LSMO/Si multilayer under different frequencies. The inset (a) shows the characteristics of the STO/LSMO/Si multilayer. Inset: contact configuration of the multilayer and the Indium electrodes of were placed on the surfaces of the film and substrate. The inset (b) is the frequency dependence of the hysteresis memory window.

Image of FIG. 3.
FIG. 3.

hysteresis memory window for the STO/LSMO/Si multilayer under 100 Hz and 50 KHz, respectively. The inset shows Nyquist plot for the STO/LSMO/Si multilayer in the backward bias region.

Image of FIG. 4.
FIG. 4.

The band diagrams for the sample under forward bias (a) and backward bias condition (b).

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/content/aip/journal/apl/97/5/10.1063/1.3476358
2010-08-05
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of polarization-memory in SrTiO3/La0.9Sr0.1MnO3 multilayer on Si substrate
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/5/10.1063/1.3476358
10.1063/1.3476358
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