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Resistive switching transition induced by a voltage pulse in a Pt/NiO/Pt structure
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10.1063/1.3477953
/content/aip/journal/apl/97/5/10.1063/1.3477953
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/5/10.1063/1.3477953
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The electrical transitions dependent on the polarity of applied pulse. (a) The initial unipolar memory switching curves of NiO film and (b) threshold, (c) memory, (d) threshold switching curves successively obtained by applying the pulse of 2 V, –2 V, and 2 V, respectively. All pulses with the same width of 1 ms were applied to control the switching properties.

Image of FIG. 2.
FIG. 2.

[(a)–(f)] Schematic pictures of switching transitions between the bistable memory switching and the monostable threshold switching induced by applying voltage, especially based on the migration of ions.

Image of FIG. 3.
FIG. 3.

Linear fitting results of HRS in (a) memory switching (MS) and (b) threshold switching (THS) with Poole–Frenkel conduction mechanism. The inset shows that low field behaviors follow Ohmic conduction.

Image of FIG. 4.
FIG. 4.

Different switching responses controlled by applying various widths of electric pulse with the same amplitude of 2 V. Unipolar memory switching, threshold switching, and dielectric breakdown behaviors are obtained by applying the pulses with the width of , , and , respectively. All pulses were applied to the HRS of unipolar memory switching.

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/content/aip/journal/apl/97/5/10.1063/1.3477953
2010-08-05
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Resistive switching transition induced by a voltage pulse in a Pt/NiO/Pt structure
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/5/10.1063/1.3477953
10.1063/1.3477953
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