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PL spectra of samples grown at 10 and 100 kPa, measured at RT.
Temperature dependence of integrated PL intensity in samples grown at 10 and 100 kPa. PL spectra at each temperature for 10 and 100 kPa samples are also shown in insets (a) and (b), respectively.
EL spectra of LEDs with GaN:Eu active layers grown at 10 and 100 kPa.
Light output power and external quantum efficiency as functions of injected current in the GaN:Eu LED grown at 100 kPa.
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