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STM images with profiles analysis of (a) single embedded Si(111) surface, (b) Si(111) superlattice surface, and (c) close up view of a molecule on a self-assembled surface.
The (dI/dV) vs voltage curve of the self-assembled embedded Si surfaces determined by UHV-STM with an enlarged scale of the z-axis in the inset.
Field emission current density vs electric field curve of the self-assembled embedded surface measured by (a) Keithley 237 source-measure unit and (b) UHV-STM, respectively. Insets show the corresponding F-N plot.
Force-distance analysis of the Si disordered surface, surface, a single layer of the self-assembled embedded Si surface and SiC surface by UHV-AFM.
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