1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Homogeneous linewidth of the intraband transition at in GaN/AlN quantum dots
Rent:
Rent this article for
USD
10.1063/1.3476340
/content/aip/journal/apl/97/6/10.1063/1.3476340
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/6/10.1063/1.3476340
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Optical density (dashed line) of the GaN/AlN QD sample. Differential transmission measurements at 10 K vs probe energy with TM-(squares) and TE-polarized (open circles) pump and probe, with a pump of at 0.8 eV. System response function (solid line) of the pump-probe setup. Insets: (right) schematic level diagram with a reference energy at the highest confined valence state; (left) Gaussian (dotted line), and Lorentzian (dashed line) fits of the hole-burning signal.

Image of FIG. 2.
FIG. 2.

(a) Amplitude of the differential transmission signal for a probe energy of 0.8 eV vs incident pump power, at 5 K. The dotted line is a guide for the eye corresponding to a function. (b) Homogeneous linewidth of the GaN/AlN QD intraband transition vs temperature.

Loading

Article metrics loading...

/content/aip/journal/apl/97/6/10.1063/1.3476340
2010-08-10
2014-04-16
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Homogeneous linewidth of the intraband transition at 1.55 μm in GaN/AlN quantum dots
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/6/10.1063/1.3476340
10.1063/1.3476340
SEARCH_EXPAND_ITEM