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(a) Characteristics of one of the analyzed samples. (b) EL intensity vs curve measured with a drain voltage on one of the analyzed samples.
(a) Integrated EL intensity plotted as a function of the drain voltage, for one of the AlGaN/GaN HEMTs analyzed within this work. Measurements were taken with a gate voltage . Left vertical axis: linear scale. Right vertical axis: logarithmic scale. (b) EL Intensity/ ratio plotted as a function of . Inset: emission microscopy image of one of the analyzed devices, showing the distribution of EL intensity along the channel.
EL spectra measured on one of the analyzed HEMTs at different drain voltage levels, with a gate voltage .
CL spectrum measured at 77 K on one of the analyzed samples. The main figure is an enlargement of the figure reported in the inset, for the spectral region between 1.9 and 2.5 eV. The black curve reports the experimental data, while the green curve represents a three-peaks Gaussian fit of the experimental data (the individual Gaussian functions are plotted in blue in the graph).
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