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Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors
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10.1063/1.3479917
/content/aip/journal/apl/97/6/10.1063/1.3479917
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/6/10.1063/1.3479917
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Characteristics of one of the analyzed samples. (b) EL intensity vs curve measured with a drain voltage on one of the analyzed samples.

Image of FIG. 2.
FIG. 2.

(a) Integrated EL intensity plotted as a function of the drain voltage, for one of the AlGaN/GaN HEMTs analyzed within this work. Measurements were taken with a gate voltage . Left vertical axis: linear scale. Right vertical axis: logarithmic scale. (b) EL Intensity/ ratio plotted as a function of . Inset: emission microscopy image of one of the analyzed devices, showing the distribution of EL intensity along the channel.

Image of FIG. 3.
FIG. 3.

EL spectra measured on one of the analyzed HEMTs at different drain voltage levels, with a gate voltage .

Image of FIG. 4.
FIG. 4.

CL spectrum measured at 77 K on one of the analyzed samples. The main figure is an enlargement of the figure reported in the inset, for the spectral region between 1.9 and 2.5 eV. The black curve reports the experimental data, while the green curve represents a three-peaks Gaussian fit of the experimental data (the individual Gaussian functions are plotted in blue in the graph).

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/content/aip/journal/apl/97/6/10.1063/1.3479917
2010-08-12
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/6/10.1063/1.3479917
10.1063/1.3479917
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