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Indium induced step transformation during InGaN growth on GaN
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10.1063/1.3479414
/content/aip/journal/apl/97/7/10.1063/1.3479414
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/7/10.1063/1.3479414
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

sized atomic force microscope images measured after the growth of (a) a low temperature GaN barrier layer, (b) a single QW, (c) a single QW, and (d) two QWs.

Image of FIG. 2.
FIG. 2.

Layer-step frequencies for single-, double-, triple-, and quadruple-layer steps for the LT-GaN (circles) shown in Fig. 1(a), a single green QW (squares) shown in Fig. 1(c), and a three period green QW (diamonds). The inset is an expanded region showing the increased frequency of the multiple-layer steps.

Image of FIG. 3.
FIG. 3.

Layer-step frequencies for single QWs grown with increasing indium content in the QW. Images (a), (b), and (c) from Fig. 1 along with a QW are analyzed and the frequency of single-(1-circles), double-(2-squares), triple-(3-diamonds), and quadruple-(4-triangles) layer steps are plotted.

Image of FIG. 4.
FIG. 4.

Layer-step frequencies for a series of increasing numbers of 3 nm thick QWs separated by 11 nm GaN barrier layers.

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/content/aip/journal/apl/97/7/10.1063/1.3479414
2010-08-16
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Indium induced step transformation during InGaN growth on GaN
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/7/10.1063/1.3479414
10.1063/1.3479414
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