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Self-consistent solution of the Schrödinger and Poisson equations (a) for sample A for an applied bias of 5.6 kV/cm and (b) for sample B for an applied bias of 4.5 kV/cm. The layer sequence in nm starting from the injection barrier for sample A and sample R is given by 4/10.1/0.5/16.2/1/12.9/2/11.8/3/9.5/3/8.6/3/7.1/3/17/3/14.5. Bold numbers refer to barriers, and the underlined number denotes the Si-doped GaAs layer. The corresponding sequence for sample B is given by 3.08/10.1/0.39/16.2/0.77/12.9/1.54/11.8/2.31/9.5/2.31/8.6/2.31/7.1/2.31/17/2.31/14.5.
(a) Emission spectra under pulsed operation at 10 K and maximum output power for samples R, B, and A. (b) Central frequency vs voltage of samples A, R, and B for the whole operating temperature regime .
(a) Threshold current density vs temperature for samples R, B, and A under pulsed operation ( laser ridges). (b) LIV characteristics for samples A, B, and R under pulsed operation ( laser ridges).
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