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Low-threshold terahertz quantum-cascade lasers based on heterostructures
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10.1063/1.3480406
/content/aip/journal/apl/97/7/10.1063/1.3480406
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/7/10.1063/1.3480406
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Self-consistent solution of the Schrödinger and Poisson equations (a) for sample A for an applied bias of 5.6 kV/cm and (b) for sample B for an applied bias of 4.5 kV/cm. The layer sequence in nm starting from the injection barrier for sample A and sample R is given by 4/10.1/0.5/16.2/1/12.9/2/11.8/3/9.5/3/8.6/3/7.1/3/17/3/14.5. Bold numbers refer to barriers, and the underlined number denotes the Si-doped GaAs layer. The corresponding sequence for sample B is given by 3.08/10.1/0.39/16.2/0.77/12.9/1.54/11.8/2.31/9.5/2.31/8.6/2.31/7.1/2.31/17/2.31/14.5.

Image of FIG. 2.
FIG. 2.

(a) Emission spectra under pulsed operation at 10 K and maximum output power for samples R, B, and A. (b) Central frequency vs voltage of samples A, R, and B for the whole operating temperature regime .

Image of FIG. 3.
FIG. 3.

(a) Threshold current density vs temperature for samples R, B, and A under pulsed operation ( laser ridges). (b) LIV characteristics for samples A, B, and R under pulsed operation ( laser ridges).

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/content/aip/journal/apl/97/7/10.1063/1.3480406
2010-08-18
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low-threshold terahertz quantum-cascade lasers based on GaAs/Al0.25Ga0.75As heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/7/10.1063/1.3480406
10.1063/1.3480406
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