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Microscale oscillating crack propagation in silicon nitride thin films
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10.1063/1.3480408
/content/aip/journal/apl/97/7/10.1063/1.3480408
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/7/10.1063/1.3480408
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SEM images of (a) random crack propagation in a continuous metal film and [(b)–(d)] wavy crack propagation guided by patterned metal underlayers. Silicon nitride thin films were deposited to conformally coat metal films on silicon wafers coated with native oxides; on (a) continuous metal films, (b) metal films patterned into lines, (c) lines with discrete width changes, and (d) lines with continuously varying widths. The samples were heated to and the thickness of the metal patterns (Ag in this case) was 20 nm. The thickness of the silicon nitride films was 240 nm. All scale .

Image of FIG. 2.
FIG. 2.

The relationship between the wavelength of a wavy crack and the width the underlying metal pattern. “120 nm SiN 20 nm Au” indicates that the thickness of the silicon nitride thin film was 120 nm, and the thickness of the patterned Au was 20 nm. is the wavelength of the wavy crack, is the width of metal pattern, and is a constant.

Image of FIG. 3.
FIG. 3.

An SEM image of cracked silicon nitride with and without a notch created using a focused ion beam system. The films were heated to . The thickness of the metal patterns (Ag in this case) was 20 nm, and the thickness of the silicon nitride was 240 nm. A white arrow indicates the notch position. Scale .

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/content/aip/journal/apl/97/7/10.1063/1.3480408
2010-08-16
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Microscale oscillating crack propagation in silicon nitride thin films
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/7/10.1063/1.3480408
10.1063/1.3480408
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