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Schematic and a corresponding TEM picture of core-shell NW structures with Si cap and SiGe core.
Noise normalized by the drain current and the channel length of (a) c-strained SiGe NWs and (b) unstrained SiGe NWs at and . Black lines are fitting curves for each 600 nm device.
(a) Normalized input gate voltage noise at 600 nm length and (b) extracted Coulomb scattering coefficient as a function of channel length.
Surface roughness limited mobility, , as a function of the channel length.
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