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Low-frequency noise in strained SiGe core-shell nanowire p-channel field effect transistors
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10.1063/1.3480424
/content/aip/journal/apl/97/7/10.1063/1.3480424
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/7/10.1063/1.3480424
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic and a corresponding TEM picture of core-shell NW structures with Si cap and SiGe core.

Image of FIG. 2.
FIG. 2.

Noise normalized by the drain current and the channel length of (a) c-strained SiGe NWs and (b) unstrained SiGe NWs at and . Black lines are fitting curves for each 600 nm device.

Image of FIG. 3.
FIG. 3.

(a) Normalized input gate voltage noise at 600 nm length and (b) extracted Coulomb scattering coefficient as a function of channel length.

Image of FIG. 4.
FIG. 4.

Surface roughness limited mobility, , as a function of the channel length.

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/content/aip/journal/apl/97/7/10.1063/1.3480424
2010-08-19
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low-frequency noise in strained SiGe core-shell nanowire p-channel field effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/7/10.1063/1.3480424
10.1063/1.3480424
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