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(a) Schematic of nanogap junction on Au nanowire. (b) FE-SEM image of a typical nanogap junction immediately after electromigration. FE-SEM images of nanowires and the nanogap junctions formed in 350 nm (c), 180 nm (d), and 45 nm (e) wide nanowires.
Memory effect in a nanogap junction with a 45 nm linewidth. (a) Characteristics of repeated on and off cycles. On- and off-states were attained according to the bias voltage diagram shown in (b).
(a) Typical current-voltage characteristics for nanogap junctions with linewidths of 45, 90, 180, 350, and 640 nm. (b) Average maximum current across nanogap junction at each linewidth.
(a) Experimental and fitted current-voltage curves for nanogap junctions with linewidths of 45, 90, 180, 350, and 640 nm. The fitted curves were estimated using the tunneling equation. (b) Gap width, work function, and emission area were obtained from the fitted curve in (a). (c) Plots of maximum currents vs emission areas.
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