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Schematic diagram of an M-type barium hexagonal ferrite (BaM) thin film-based mm-wave phase shifter.
(a) Hysteresis loops for a BaM thin film measured under different field orientations, as indicated. (b) FMR absorption derivative vs field profile measured at 60 GHz.
Graphs (a) and (b) show the transmission and phase profiles, respectively, for the device shown in Fig. 1. These profiles were measured under four different fields (kilo-oersted), as indicated. Graphs (c) and (d) show the frequency and 3 dB line width, respectively, for the dips in the transmission profiles shown representatively in (a).
Phase shift and insertion loss of a BaM thin film phase shifter as a function of bias field. The data in (a) and (b) were measured at a fixed frequency of 50 GHz. The data in (c) and (d) were measured at 54 GHz.
Theoretical results. Graphs (a) and (b) show the device transmission and phase profiles, respectively, for four different fields (kilo-oersted). Graphs (c) and (d) show the phase shift as a function of field for 50 GHz and 54 GHz, respectively.
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