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Influence of doping at the nanoscale at interfaces
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10.1063/1.3481353
/content/aip/journal/apl/97/7/10.1063/1.3481353
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/7/10.1063/1.3481353
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagrams of the samples grown for these experiments. (a) Layers of homoepitaxial STO grown between the substrate and the LAO cap; (b) layers of M–STO grown between the substrate and the LAO cap; (c) STO/Mn–STO layers grown on the STO substrate so that the LAO/STO interface is formed between LAO and undoped homoepitaxial STO.

Image of FIG. 2.
FIG. 2.

Carrier density and mobility at 200K for LAO heterostructures with , 0.0003, 0.001, 0.003, and 0.01.

Image of FIG. 3.
FIG. 3.

Resistance versus temperature for LAO with , 0.0003, 0.001, 0.003, and 0.01.

Image of FIG. 4.
FIG. 4.

Carrier density and mobility at 200 K for LAO heterostructures with , Ti, V, Cr, Mn, Fe, Co, Nb, and In.

Image of FIG. 5.
FIG. 5.

Carrier density at 200 K for LAO heterostructures with , Ti, V, Cr, Mn, Fe, and Co, and ionization energy of M. The fourth ionization energy is taken for Ti and the third ionization energy for the other elements.

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/content/aip/journal/apl/97/7/10.1063/1.3481353
2010-08-18
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of doping at the nanoscale at LaAlO3/SrTiO3 interfaces
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/7/10.1063/1.3481353
10.1063/1.3481353
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