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(a) Layer structure of InGaN/GaN solar cells with twelve periods of 3 nm thick QW and 17 nm GaN barrier, and (b) optical microscopy image of a fabricated solar cell with mesa size.
Room temperature current density versus voltage and power density versus voltage (P-V) characteristics of MQW solar cells under AM 1.5 irradiation. , FF and are 1.8 V, , 64% and 2.95%, respectively.
(a) curves of MQW solar cells under irradiation of different levels of solar light concentration, C, and (b) as a function of C, which shows a linear increasing of with solar concentration .
(a) and as functions of solar concentration, C. increases logarithmically with C. In order to calculate the values of using Eq. (1), experimentally measured value of and diode ideality factor, determined from dark curve were used. (b) Solar-energy-to-electricity conversion efficiency, , as a function of solar concentration, C. The efficiency increases from 2.95% to 3.03 % as C increases from 1 to 30 suns.
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