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Lateral photoconductivity signal in a wide device structure, for probe beam incident along and polarized with and . As an example, the inferred and contributions (dashed lines) and their sum (thin continuous line) for , as obtained from of lineshape fitting, are shown. The top inset shows the relative oscillator strength , of the (square) and the (circle) transitions, as a function of the polarization angle of the probe beam in the (001) plane. The black lines represent theoretical fits. The bottom inset shows a schematic of the cross section of the device with layer thickness in nanometer (italics).
Lateral photoconductivity signal in a (a) wide device at 11 K and the (b) wide device at 297 K for incident polarization and .
Variation in the relative oscillator strength components (, , and ) of and transitions in a  oriented QW as a function of in-plane strain and . The dashed lines identify the isotropic strain case when .
Calculated energies at 11 K of (a) and (b) exciton transitions in a  oriented QW as a function of in-plane strain and . The dashed lines identify the isotropic strain case when . Calculated polarization anisotropy, in terms of the difference between and , for (c) and (d) transitions, as a function of in-plane strain. The circles and the squares mark the estimated strain in the and the wide devices, respectively.
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