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Comparison of majority carrier charge transfer velocities at Si/polymer and Si/metal photovoltaic heterojunctions
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10.1063/1.3480599
/content/aip/journal/apl/97/8/10.1063/1.3480599
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/8/10.1063/1.3480599
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Forward bias response for a n-Si/PEDOT:PSS device measured at several temperatures (K). (b) Temperature dependence of for (◼) n-Si/Au and (○) n-Si/PEDOT:PSS contacts.

Image of FIG. 2.
FIG. 2.

(a) Band bending diagram for a semiconductor heterojunction illuminated by short- and long-wavelength light. Solid and dashed arrows indicate favorable and deleterious processes for photogenerated carrier collection, respectively. (b) Calculated wavelength-dependent internal quantum yields for Si heterojunctions with , , and several values of . (c) Measured wavelength-dependent internal quantum yield for a representative n-Si/Au contact. The solid line is a fit with . (d) Measured wavelength-dependent internal quantum yield for a representative n-Si/PEDOT:PSS device. The solid line is a fit with . (e) Measured wavelength-dependent internal quantum yield for a representative n-Si/PEDOT:PSS device made with -terminated n-Si(111). The solid line is a fit with .

Image of FIG. 3.
FIG. 3.

Representative steady-state responses under white-light illumination for n-Si/PEDOT:PSS heterojunctions with various bulk optoelectronic properties. values are indicated by dashed lines. (d) Measured values from Figs. 3(a)–3(c) as a function of the maximum expected values from Eq. (3). Responses for n-Si/Au devices from (×) (Ref. 22) and (Ref. 21) and (◼) a control sample. The solid line represents the maximum attainable values set by bulk recombination.

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/content/aip/journal/apl/97/8/10.1063/1.3480599
2010-08-23
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Comparison of majority carrier charge transfer velocities at Si/polymer and Si/metal photovoltaic heterojunctions
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/8/10.1063/1.3480599
10.1063/1.3480599
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