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GaN-based light emitting diodes with embedded pillars and air gap array structures
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10.1063/1.3481692
/content/aip/journal/apl/97/8/10.1063/1.3481692
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/8/10.1063/1.3481692

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional SEM images of LED with pillars and air gap arrays of (a) 200 and 500, (b) 500 and 500, and (c) 700 and 400 nm height pillars and air gaps, and (d) mechanisms of the air gaps formation using ELO techniques.

Image of FIG. 2.
FIG. 2.

Forward I–V characteristics of all fabricated LEDs, and the inset is reverse I–V characteristics of all fabricated LEDs.

Image of FIG. 3.
FIG. 3.

EL spectra of all fabricated LEDs measured at 20 mA.

Image of FIG. 4.
FIG. 4.

Measured output power as a function of the injection current for fabricated LEDs.

Image of FIG. 5.
FIG. 5.

Relationship between the power enhancement factors of the experiment and the simulation with different heights of pillars and air gaps.

Tables

Generic image for table
Table I.

Detailed parameters used in the simulation.

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/content/aip/journal/apl/97/8/10.1063/1.3481692
2010-08-23
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: GaN-based light emitting diodes with embedded SiO2 pillars and air gap array structures
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/8/10.1063/1.3481692
10.1063/1.3481692
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