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Mobility and saturation velocity in graphene on
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10.1063/1.3483130
/content/aip/journal/apl/97/8/10.1063/1.3483130
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/8/10.1063/1.3483130
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Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic of a graphene sample ( , , and ) connected to four-probe electrodes; graphene colorized for clarity. Thermal resistance model is used to calculate average temperature rise at high bias. (b) Calculated carrier density vs. gate voltage at 300 K and 500 K in electron-doped regime . Solid lines include contribution from electrostatic inhomogeneity and thermal carriers (both relevant at 300 K), dotted lines include only (dominant at 500 K). Dashed line shows only contribution from gating, .

Image of FIG. 2.
FIG. 2.

(a) Mobility vs. carrier density in the electron-doped regime , obtained from conductivity measurements at , in 50 K intervals. The qualitative dependence on charge density is similar to that found in carbon nanotubes, see Ref. 22 . Dashed line shows fit of Eq. (4) with (also see Ref. 14 ). (b) Mobility vs. temperature at (top), (middle), and (bottom). Dashed line shows fit of Eq. (4) with .

Image of FIG. 3.
FIG. 3.

Electron saturation velocity. (a) Background temperature with , and (b) with (in 10 V steps from top to bottom). Squares represent data, lines are empirical fits with Eq. (6) ; open squares have from Joule heating and were not used for fit. Changing fitting criteria results in ±8% uncertainty. (c) Saturation velocity vs. electron density at . Side panel shows carrier distribution assumed for analytic model. Dashed lines show Eq. (7) with and 160 meV (graphene), the latter suggesting the maximum that could be achieved in graphene. Theoretical studies (Ref. 23 ) predict comparable in carbon nanotubes. Electron for Si and Ge are appreciably lower but largely independent of carrier density (Ref. 21 ).

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/content/aip/journal/apl/97/8/10.1063/1.3483130
2010-08-27
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Mobility and saturation velocity in graphene on SiO2
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/8/10.1063/1.3483130
10.1063/1.3483130
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