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Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device
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10.1063/1.3483158
/content/aip/journal/apl/97/8/10.1063/1.3483158
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/8/10.1063/1.3483158
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) A schematic configuration of Cu/AlN/Pt device. (b) Low-magnification cross section TEM image of the AlN films. (c) XRD patterns of AlN films deposited on substrates.

Image of FIG. 2.
FIG. 2.

(a) curve of Cu/AlN/Pt device on semilog scale. (b) The linear fitting of curve in log-log scale and the corresponding slopes for each portion.

Image of FIG. 3.
FIG. 3.

Temperature dependent resistance in (a) LRS and (b) HRS. (c) The dependence of on CC.

Image of FIG. 4.
FIG. 4.

(a) Endurance performance and (b) retention of the Cu/AlN/Pt devices. The resistance was read out at 0.1 V.

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/content/aip/journal/apl/97/8/10.1063/1.3483158
2010-08-23
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/8/10.1063/1.3483158
10.1063/1.3483158
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