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TEM images of SWNT coated by Pd NPs when the weight ratio of is (a) 1:1, (b) 4:1, (c) 8:1, and (d) the conductivity of SWNT/Pd films.
Transfer current-gate voltage characteristics of (a) SWNT-FET and (b) SWNT/Pd-FET and the inset is the dimension of FET made by E-beam evaporation using shadow mask.
Energy level diagrams adjusted in relation to the vacuum level showing the potential of and schematic electronic band of metallic and semiconducting SWNT. Arrows indicate the electron flow from Fermi level to Pd.
G-band in Raman spectra of (a) SWNT/Pd-Top, (b) pure SWNT, and (c) SWNT/Pd-Bot. and stands for metallic and semiconducting tubes.
RBM bands in Raman spectra of (a) SWNT/Pd-Top, (b) pure SWNT, and (c) SWNT/Pd-Bot.
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