1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
High-gain complementary inverter with InGaZnO/pentacene hybrid ambipolar thin film transistors
Rent:
Rent this article for
USD
10.1063/1.3483616
/content/aip/journal/apl/97/8/10.1063/1.3483616
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/8/10.1063/1.3483616
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) The schematic of a single hybrid ambipolar inverter consisting of two ambipolar TFTs with a-IGZO/pentacene heterostructure. (b) The equal inverter circuit comprising two identical ambipolar TFTs.

Image of FIG. 2.
FIG. 2.

(a) The -channel transfer characteristics of ambipolar TFTs with a-IGZO/pentacene hybrid heterostructure measured at a drain voltage of 20 V, where the a-IGZO films were thermally annealed at , , and , respectively, and referred to as , , and . (b) The -channel transfer characteristics of ambipolar TFTs with a-IGZO/pentacene hybrid heterostructure measured at , where the a-IGZO films were thermally annealed at , , and , respectively, and referred to as , , and .

Image of FIG. 3.
FIG. 3.

(a) The -channel (electron accumulation mode) transfer characteristics of ambipolar TFTs with a-IGZO/pentacene hybrid heterostructure with the a-IGZO thermally annealed at the highest temperature in this study. (b) The -channel (hole accumulation mode) transfer characteristics of ambipolar TFTs with a-IGZO/pentacene hybrid heterostructure with the a-IGZO thermally annealed at .

Image of FIG. 4.
FIG. 4.

Voltage transfer curve and their corresponding gains of the ambipolar inverter with , , and , operated in the (a) first quadrant and (b) third quadrant. The corresponding voltage gains of the ambipolar inverter operated in both the first and third quadrants are all close to 60.

Loading

Article metrics loading...

/content/aip/journal/apl/97/8/10.1063/1.3483616
2010-08-25
2014-04-20
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-gain complementary inverter with InGaZnO/pentacene hybrid ambipolar thin film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/8/10.1063/1.3483616
10.1063/1.3483616
SEARCH_EXPAND_ITEM