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Oxygen migration at interface under bias operation
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10.1063/1.3483756
/content/aip/journal/apl/97/8/10.1063/1.3483756
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/8/10.1063/1.3483756
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic illustration of measurement setup. (b) I-V property for Pt film on film as a function of bias. Open symbols show forward bias conditions and solid symbols show reverse bias conditions. (c) HX-PES of as a function of TOA under zero bias and (d) as a function of bias at a TOA of 20°.

Image of FIG. 2.
FIG. 2.

HX-PES of (a) and (b) for the diode under a bias of −150 mV (reverse bias) at a TOA of 20°. Solid lines show spectra and open circles show sum-fitted curves. Dashed lines are fitted curves for each bond: Pt, PtO, , and HfPt.

Image of FIG. 3.
FIG. 3.

Applied bias dependences of (a) intensity of PtO (circles), (b) intensity ratio of HfPt (squares), and (c) intensity of (triangles). All spectra were normalized by the intensity of Pt at 0 V (initial state). Open symbols show forward bias conditions and solid symbols show reverse bias conditions.

Image of FIG. 4.
FIG. 4.

Schematic illustration of the interface at (a) initial state, under (b) forward bias, and (c) reverse bias.

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/content/aip/journal/apl/97/8/10.1063/1.3483756
2010-08-26
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Oxygen migration at Pt/HfO2/Pt interface under bias operation
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/8/10.1063/1.3483756
10.1063/1.3483756
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