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phase change material for low-power phase change memory application
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10.1063/1.3483762
/content/aip/journal/apl/97/8/10.1063/1.3483762
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/8/10.1063/1.3483762

Figures

Image of FIG. 1.
FIG. 1.

(a) DSC graph of amorphous films. Heating rate is 10 K/min, (b) UV-vis diffuse reflectance spectra of glassy and crystalline films. Inset: plot of vs photon energy for crystalline film.

Image of FIG. 2.
FIG. 2.

Set and reset operations of phase-change memory device with an effective diameter of : (a) set with a 2.4 V-400 ns pulse, (b) reset with a 5.5 V-30 ns pulse.

Image of FIG. 3.
FIG. 3.

Repeated switching of phase-change memory device with an effective diameter of . Device was switched between the amorphous and crystalline states by applying special voltage pulses.

Image of FIG. 4.
FIG. 4.

The plot of the characteristic time as a function of reciprocal temperature for the amorphous films.

Tables

Generic image for table
Table I.

Crystallization and melting temperature ( and ), thermal conductivity , resistivity of crystalline state , and average number of covalence electrons per single atom for phase change materials GST and .

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/content/aip/journal/apl/97/8/10.1063/1.3483762
2010-08-24
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ga2Te3 phase change material for low-power phase change memory application
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/8/10.1063/1.3483762
10.1063/1.3483762
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