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(a) DSC graph of amorphous films. Heating rate is 10 K/min, (b) UV-vis diffuse reflectance spectra of glassy and crystalline films. Inset: plot of vs photon energy for crystalline film.
Set and reset operations of phase-change memory device with an effective diameter of : (a) set with a 2.4 V-400 ns pulse, (b) reset with a 5.5 V-30 ns pulse.
Repeated switching of phase-change memory device with an effective diameter of . Device was switched between the amorphous and crystalline states by applying special voltage pulses.
The plot of the characteristic time as a function of reciprocal temperature for the amorphous films.
Crystallization and melting temperature ( and ), thermal conductivity , resistivity of crystalline state , and average number of covalence electrons per single atom for phase change materials GST and .
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