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Raman scattering on intrinsic surface electron accumulation of InN nanowires
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10.1063/1.3483758
/content/aip/journal/apl/97/9/10.1063/1.3483758
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/9/10.1063/1.3483758
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Raman spectra of as-grown vertical aligned InN NW recorded in backscattering geometry parallel to the c-axis for excitation laser power of 0.25 mW near the sample surface. Silicon peak is marked by an asterisk .

Image of FIG. 2.
FIG. 2.

Raman spectrum of coupled LO phonon-plasmon mode of InN nanowires.

Image of FIG. 3.
FIG. 3.

Raman spectra of InN NWs recorded perpendicular to the c-axis of nanowire. Silicon peak is marked by an asterisk .

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/content/aip/journal/apl/97/9/10.1063/1.3483758
2010-09-01
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Raman scattering on intrinsic surface electron accumulation of InN nanowires
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/9/10.1063/1.3483758
10.1063/1.3483758
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