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Formation of low-resistance Ohmic contacts to N-face n-GaN for high-power GaN-based vertical light-emitting diodes
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10.1063/1.3484152
/content/aip/journal/apl/97/9/10.1063/1.3484152
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/9/10.1063/1.3484152
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The typical characteristics of the Al(Ga)(50 nm)Ti(30 nm)/Al(200 nm) and Ti(30 nm)/Al(200 nm) contacts on -GaN before and after annealing at .

Image of FIG. 2.
FIG. 2.

The core levels for (a) Ti/Al and (b) Al(Ga)/Ti/Al contacts before and after annealing at , which were obtained from the interface regions between the electrodes and GaN.

Image of FIG. 3.
FIG. 3.

SIMS depth profiles obtained from (a) Ti/Al and (b) Al(Ga)/Ti/Al samples on the N-face -GaN before and after annealing at . Solid lines denote as-deposited samples but dotted lines represent annealed samples. The arrows indicate the interface regions.

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/content/aip/journal/apl/97/9/10.1063/1.3484152
2010-08-31
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Formation of low-resistance Ohmic contacts to N-face n-GaN for high-power GaN-based vertical light-emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/9/10.1063/1.3484152
10.1063/1.3484152
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