No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Formation of low-resistance Ohmic contacts to N-face n-GaN for high-power GaN-based vertical light-emitting diodes
1.W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson, Appl. Phys. Lett. 75, 1360 (1999).
3.H. Kim, K. -K. Kim, K. -K. Choi, H. Kim, J. -O. Song, J. Cho, K. H. Baik, C. Sone, Y. Park, and T. -Y. Seong, Appl. Phys. Lett. 91, 023510 (2007).
16.J. -W. Jeon, S. -H. Park, S. -Y. Jung, J. Moon, J. -O. Song, G. Namgoong, and T. -Y. Seong, Electrochem. Solid-State Lett. 13, H125 (2010).
17.It is shown that regardless of annealing, both the Al(Ga)/Ti/Al samples reveal a distinct tail in the Ga profiles. We believe that the tail could be formed as a result of the outdiffusion of Ga atoms from the Al(Ga) layer during electron-beam evaporation, since metallic Ga has a low melting point of .
21.S. Ruvimov, Z. Liliental-Weber, J. Washburn, K. J. Duxstad, E. E. Haller, Z. -F. Fan, S. N. Mohammad, W. Kim, A. E. Botchkarev, and H. Morkoç, Appl. Phys. Lett. 69, 1556 (1996).
23.H. Okamoto, Phase Diagrams for Binary Alloys: A Desk Handbook (American Society for Metals, Metals Park, OH, 2000).
Article metrics loading...
Full text loading...
Most read this month