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Formation of low-resistance Ohmic contacts to N-face n-GaN for high-power GaN-based vertical light-emitting diodes
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10.1063/1.3484152
/content/aip/journal/apl/97/9/10.1063/1.3484152
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/9/10.1063/1.3484152
/content/aip/journal/apl/97/9/10.1063/1.3484152
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/content/aip/journal/apl/97/9/10.1063/1.3484152
2010-08-31
2014-10-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Formation of low-resistance Ohmic contacts to N-face n-GaN for high-power GaN-based vertical light-emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/9/10.1063/1.3484152
10.1063/1.3484152
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