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(a) Cartoon of DEP assembly setup. (b) Tapping-mode AFM of a RGO device assembled via DEP. Scale bar represents 500 nm. (c) Height profile of the AFM image shown in Fig. 1(b). (d) Room temperature transfer characteristic of device A.
(a) Current-Voltage characteristics at different temperatures for device A. (b) curves at different temperatures plotted in semi log scale to clearly show highly symmetric nature of the curves. (c) Current density vs plotted in a log-log scale for different temperatures. The symbols are the experimental points while the solid lines are fits to . Two regions are separated by . For , and the conduction is Ohmic. the conduction is due to SCLC with exponentially distributed trap states. (d) Expanded view of the SCLC regime. For clarity, at 77 K was divided by 1.2.
Extrapolation of the curves at low temperatures plotted in log-log scale for device A. From this plot, we determine the temperature independent crossover voltage .
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