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High-performance metal-insulator-metal capacitor with Ge-stabilized tetragonal /amorphous La-doped dielectric
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10.1063/1.3535605
/content/aip/journal/apl/98/1/10.1063/1.3535605
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/1/10.1063/1.3535605
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XRD spectra for ZGZ laminates with and without RTA. The inset is the XPS spectra for ZGZ laminates with and without RTA.

Image of FIG. 2.
FIG. 2.

C-V characteristics for MIM capacitors with different process conditions.

Image of FIG. 3.
FIG. 3.

vs voltage for MIM capacitors with different process conditions where is the zero-biased capacitance and is the difference between C(V) and for fresh devices.

Image of FIG. 4.
FIG. 4.

Impact of a La-doped capping layer on leakage current density for MIM capacitors with annealed ZGZ laminates measured at room temperature.

Image of FIG. 5.
FIG. 5.

Dependence of on stress time for MIM capacitors with and without a La-doped capping layer measured at room temperature.

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/content/aip/journal/apl/98/1/10.1063/1.3535605
2011-01-06
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-performance metal-insulator-metal capacitor with Ge-stabilized tetragonal ZrO2/amorphous La-doped ZrO2 dielectric
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/1/10.1063/1.3535605
10.1063/1.3535605
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