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Characteristics of a high speed tunnel injection p-doped quantum dot excited state laser
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10.1063/1.3535607
/content/aip/journal/apl/98/1/10.1063/1.3535607
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/1/10.1063/1.3535607
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Heterostructure of quantum dot laser grown by MBE. The inset shows the detailed description of one dot layer period in the active region; (b) measured photoluminescence of the laser heterostructure and calculated reflectivity of the high-reflectivity coating showing the reflectivity at the excited state (91%) and at the ground state (45%).

Image of FIG. 2.
FIG. 2.

Light-current (L-I) characteristics for excited state lasing of QD laser. The inset shows the lasing spectrum at 300 K.

Image of FIG. 3.
FIG. 3.

(a) Cavity length dependence of inverse external quantum efficiency. The inset shows modal gain vs current density from which a ground state modal gain of and an excited state modal gain of are derived; (b) measured small-signal modulation response for excited state lasing. A maximum modulation bandwidth of 13.5 GHz is measured.

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/content/aip/journal/apl/98/1/10.1063/1.3535607
2011-01-04
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characteristics of a high speed 1.22 μm tunnel injection p-doped quantum dot excited state laser
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/1/10.1063/1.3535607
10.1063/1.3535607
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