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Cross-sectional diagram of the bottom gate, inverted staggered thin film transistor devices with a etch stopper, and passivation. The gate metal is molybdenum (Mo) and the source-drain metals consist of a titanium/copper (Ti/Cu) bilayer.
Transfer curves recorded in the dark and the light on and upon NBIS for (a) device A and (b) device B. Although the transfer curves were collected every 30 min during the NBIS test, only those at 3, 6, 9, and 12 h of stress are shown here for the sake of illustration.
vs stress time plots of the devices subjected to negative bias illumination stress. The extended solid lines represent the calculated values in compliance with the stretched exponential function.
Initial transfer characteristics of the devices.
Stretched exponential parameters in the stressed devices.
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