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The effect of UV-assisted cleaning on the performance and stability of amorphous oxide semiconductor thin-film transistors under illumination
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10.1063/1.3536479
/content/aip/journal/apl/98/1/10.1063/1.3536479
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/1/10.1063/1.3536479

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional diagram of the bottom gate, inverted staggered thin film transistor devices with a etch stopper, and passivation. The gate metal is molybdenum (Mo) and the source-drain metals consist of a titanium/copper (Ti/Cu) bilayer.

Image of FIG. 2.
FIG. 2.

Transfer curves recorded in the dark and the light on and upon NBIS for (a) device A and (b) device B. Although the transfer curves were collected every 30 min during the NBIS test, only those at 3, 6, 9, and 12 h of stress are shown here for the sake of illustration.

Image of FIG. 3.
FIG. 3.

vs stress time plots of the devices subjected to negative bias illumination stress. The extended solid lines represent the calculated values in compliance with the stretched exponential function.

Tables

Generic image for table
Table I.

Initial transfer characteristics of the devices.

Generic image for table
Table II.

Stretched exponential parameters in the stressed devices.

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/content/aip/journal/apl/98/1/10.1063/1.3536479
2011-01-05
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The effect of UV-assisted cleaning on the performance and stability of amorphous oxide semiconductor thin-film transistors under illumination
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/1/10.1063/1.3536479
10.1063/1.3536479
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