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(a) The XRD spectra of 5, 10, 20, 30, 50, and 200 ML ITO thin-films grown on LAO. (b) scan of ITO (222) diffraction peak of 200 ML ITO thin-film.
AFM 3D images : (a) 5, (b) 20, and (c) 200 ML ITO thin-films grown on LAO substrates.
The temperature dependence of resistivity for the ITO thin-films with various thicknesses: (a) 200, (b) 50, (c) 20, (d) 10, and (e) 5 ML. The film thickness dependence of the resistivity of ITO films at 300 K is shown in (f). Inset in (f) is a phase diagram of ITO thin-films showing the relationship between transition temperature and the film thickness. The red hatched areas in (f) represent the insulator states of ITO films with thickness below 5 ML.
(a) The relationship between and for the ITO thin-films of 200, 50, 20, and 10 ML. (b) The relationship between and for the 5 ML ITO thin-film. The solid lines in (a) and (b) are simulated from Eqs. (1) and (2), respectively.
Optical transmittances of ITO thin-films with thicknesses of 5, 20, and 100 ML.
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