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Water-related abnormal instability of transparent oxide/organic hybrid thin film transistors
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10.1063/1.3551536
/content/aip/journal/apl/98/10/10.1063/1.3551536
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/10/10.1063/1.3551536
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Device structure of hybrid TFTs: (a) side-view and (b) top-view (microscope image); I-V characteristics of hybrid TFTs at a maximum process temperature of : (c) transfer curves (d) and output curves .

Image of FIG. 2.
FIG. 2.

Stability characteristics of the TFTs at a gate bias of 20 V: (a) without passivation and under ambient conditions , (b) without passivation and under vacuum conditions , (c) with a parylene-C passivation layer and under ambient conditions (annealed at ), and (d) for the different devices and measurement conditions .

Image of FIG. 3.
FIG. 3.

Stability characteristics of hybrid TFTs containing a passivation layer: (a) variation under several gate bias stresses, (b) variation under several gate (10 V fixed)/drain bias stresses .

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/content/aip/journal/apl/98/10/10.1063/1.3551536
2011-03-11
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Water-related abnormal instability of transparent oxide/organic hybrid thin film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/10/10.1063/1.3551536
10.1063/1.3551536
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