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Detection of a ZnSe secondary phase in coevaporated thin films
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Top view SEM micrograph of a coevaporated absorber layer. (b) Typical PL spectra showing a broad peak at 0.95 eV. (c) GIXRD analysis of the sample grown at . CZTSe, Mo, and are identified. The reflection indicated with a # is due to an incomplete removal of the radiation.

Image of FIG. 2.
FIG. 2.

(a) SIMS analysis of a CZTSe sample grown at . Strong increase in the Zn concentration at the CZTSe/Mo interface. (b) Raman spectra measured on the front and back surfaces and the remaining substrate after mechanically removing the absorber. Spectra are normalized to the intensity of the highest peak, and spectra from the different regions are vertically shifted for more clarity.

Image of FIG. 3.
FIG. 3.

(a) Raman spectrum from the surface of the sample obtained after interrupting the growth process (10 min deposition). , ZnSe, and a weak CZTSe peak at about are identified, (b) EDX mapping of the interrupted process. Cu signal: light gray (yellow), Zn signal: dark gray (green).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Detection of a ZnSe secondary phase in coevaporated Cu2ZnSnSe4 thin films