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Interface traps responsible for negative bias temperature instability in a nitrided submicron metal-oxide-semiconductor field effect transistor
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10.1063/1.3559223
/content/aip/journal/apl/98/10/10.1063/1.3559223
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/10/10.1063/1.3559223
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Figures

Image of FIG. 1.
FIG. 1.

(a) , , and in nMOS(NBT) at at 398, 448, and 523 K. Lines are guide to the eyes. (b) , , and in nMOS(FN) and nMOS(NBT) at 523 K depending on and . Lines are guide to the eyes. For a reference, injected carrier amount during FN stress is plotted on the upper axis.

Image of FIG. 2.
FIG. 2.

(a) dependence of in nMOS(FN) at 8000 s. (b) SDT spectra for nMOS(Fresh), nMOS(FN) at , and nMOS(NBT) at (solid lines). Dotted and dashed lines are the Lorentzian curves corresponding to two -centers and the summation of them. The magnetic field was set parallel to the [100] axis. (c) The -anisotropy maps for nMOS(FN) at and nMOS(NBT) at for rotation of the magnetic field in (011) plane. is the field orientation measured from [100] direction. (Upper) Lines are the angular variations in branches calculated using reported -tensor values (see Ref. 12). White and black circles correspond to experimental -values of nMOS(FN) and nMOS(NBT). (Lower) Lines represent branches calculated by the Miura’s dangling bond tilting model (see Ref. 12). White and black triangles correspond to experimental -values of nMOS(FN) and nMOS(NBT).

Image of FIG. 3.
FIG. 3.

Normalized and depending on and for nMOS(FN) and nMOS(NBT). Lines are guide to the eyes. For a reference, injected carrier amount during FN stress is plotted on the upper axis.

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/content/aip/journal/apl/98/10/10.1063/1.3559223
2011-03-11
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interface traps responsible for negative bias temperature instability in a nitrided submicron metal-oxide-semiconductor field effect transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/10/10.1063/1.3559223
10.1063/1.3559223
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