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Interface traps responsible for negative bias temperature instability in a nitrided submicron metal-oxide-semiconductor field effect transistor
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10.1063/1.3559223
/content/aip/journal/apl/98/10/10.1063/1.3559223
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/10/10.1063/1.3559223
/content/aip/journal/apl/98/10/10.1063/1.3559223
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/content/aip/journal/apl/98/10/10.1063/1.3559223
2011-03-11
2014-12-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interface traps responsible for negative bias temperature instability in a nitrided submicron metal-oxide-semiconductor field effect transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/10/10.1063/1.3559223
10.1063/1.3559223
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