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Degree of ballisticity in JNT and IM nanowire transistors with different cross section. The JNT has a higher (lower) degree of ballisticity than the IM device below (above) threshold.
First subband profile for a JNT and an IM transistor at . Note the absence of a potential barrier at the source-channel “junction” in the JNT.
Degree of ballisticity in IM device as a function of silicon nanowire cross-section in the on-state and the off-state. Reducing the nanowire cross-section increases the effect of electron–phonon interaction leading to lower degree of ballisticity.
Electron density in the subthreshold regime for JL and IM devices plotted at . For the “” JNT and the “” IM device have almost the same electron distribution profile. However, for the carriers of the “” JNT are more squeezed in the center of the channel region than in the IM device which. As a result the JNT has a smaller effective cross section in subthreshold region than the IM device.
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