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Atomic-scale characterization of the interface in thin-film solar cells
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10.1063/1.3560308
/content/aip/journal/apl/98/10/10.1063/1.3560308
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/10/10.1063/1.3560308

Figures

Image of FIG. 1.
FIG. 1.

Bright-field TEM image of the CIS/CdS/ZnO interfaces. The CdS layer as identified by a selected area diffraction pattern (see inset) has uniform thickness .

Image of FIG. 2.
FIG. 2.

(a) APT elemental maps of Cu, In, Se, Cd, and S. The volume size shown is . (b) Proximity histogram with respect to the Cd 26 at. % isoconcentration surface and 0.3 nm bin size.

Image of FIG. 3.
FIG. 3.

APT elemental maps of Cu , In, Se, Cd, and S, in three different views. The volume size shown here is .

Tables

Generic image for table
Table I.

Chemical composition values of CdS and layers obtained from APT mass-to-charge spectra after deconvolution of overlapping mass peaks.

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/content/aip/journal/apl/98/10/10.1063/1.3560308
2011-03-08
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Atomic-scale characterization of the CdS/CuInSe2 interface in thin-film solar cells
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/10/10.1063/1.3560308
10.1063/1.3560308
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