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Bright-field TEM image of the CIS/CdS/ZnO interfaces. The CdS layer as identified by a selected area diffraction pattern (see inset) has uniform thickness .
(a) APT elemental maps of Cu, In, Se, Cd, and S. The volume size shown is . (b) Proximity histogram with respect to the Cd 26 at. % isoconcentration surface and 0.3 nm bin size.
APT elemental maps of Cu , In, Se, Cd, and S, in three different views. The volume size shown here is .
Chemical composition values of CdS and layers obtained from APT mass-to-charge spectra after deconvolution of overlapping mass peaks.
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