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Capacitance-voltage modeling of metal-ferroelectric-semiconductor capacitors based on epitaxial oxide heterostructures
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10.1063/1.3561751
/content/aip/journal/apl/98/10/10.1063/1.3561751
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/10/10.1063/1.3561751
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic cross-section of the MFS capacitor along with an equivalent circuit. (b) The saturated hysteresis loop of ferroelectric polarization as a function of the electric field.

Image of FIG. 2.
FIG. 2.

Simulation example of (a) , (b) , and (c) in the MFS structure for different carrier concentrations .

Image of FIG. 3.
FIG. 3.

Simulation example of (a) , (b) , and (c) in the MFIS structure for and . Results in the MFS structure are also shown for comparison.

Image of FIG. 4.
FIG. 4.

curves of (a) the MFM capacitors and the MFS capacitors with the carrier concentration of (b) , (c) , and (d) in the semiconductor. As the carrier concentration increases in the MFS structure, the contribution of decreases in depletion making the shape of the curves similar to that of the MFM capacitor.

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/content/aip/journal/apl/98/10/10.1063/1.3561751
2011-03-07
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Capacitance-voltage modeling of metal-ferroelectric-semiconductor capacitors based on epitaxial oxide heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/10/10.1063/1.3561751
10.1063/1.3561751
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