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X-ray pole figure of CoFe 011 diffraction for sample-A.
Magnetic hysteresis curves of epitaxial CoFe films grown (a) on the As-stabilized GaAs surface (sample-A) and (b) on the Ga-stabilized GaAs surface (sample-B). A magnetic field was applied along the  and directions.
Polar plots of the tunnel resistance of a CoFe/n-GaAs Schottky junction with the As-stabilized n-GaAs surface (sample-A) biased at (a) 0.10 V and (b) 0.25 V, and with the Ga-stabilized n-GaAs surface (sample-B) biased at (c) 0.10 V and (d) 0.25 V. The bias voltage was defined with respect to the n-GaAs. The polar angle indicates the direction of magnetization with respect to the  direction.
Bias-voltage dependence of the normalized , defined by , of CoFe/n-GaAs Schottky junctions with the As-stabilized n-GaAs surface and with the Ga-stabilized n-GaAs surface (sample-B), where and stand for the tunnel resistance when the magnetization of the CoFe electrode orients to the  and directions, respectively.
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