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Influence of GaAs surface structure on tunneling anisotropic magnetoresistance and magnetocrystalline anisotropy in epitaxial junctions
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10.1063/1.3561759
/content/aip/journal/apl/98/10/10.1063/1.3561759
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/10/10.1063/1.3561759
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

X-ray pole figure of CoFe 011 diffraction for sample-A.

Image of FIG. 2.
FIG. 2.

Magnetic hysteresis curves of epitaxial CoFe films grown (a) on the As-stabilized GaAs surface (sample-A) and (b) on the Ga-stabilized GaAs surface (sample-B). A magnetic field was applied along the [110] and directions.

Image of FIG. 3.
FIG. 3.

Polar plots of the tunnel resistance of a CoFe/n-GaAs Schottky junction with the As-stabilized n-GaAs surface (sample-A) biased at (a) 0.10 V and (b) 0.25 V, and with the Ga-stabilized n-GaAs surface (sample-B) biased at (c) 0.10 V and (d) 0.25 V. The bias voltage was defined with respect to the n-GaAs. The polar angle indicates the direction of magnetization with respect to the [110] direction.

Image of FIG. 4.
FIG. 4.

Bias-voltage dependence of the normalized , defined by , of CoFe/n-GaAs Schottky junctions with the As-stabilized n-GaAs surface and with the Ga-stabilized n-GaAs surface (sample-B), where and stand for the tunnel resistance when the magnetization of the CoFe electrode orients to the [110] and directions, respectively.

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/content/aip/journal/apl/98/10/10.1063/1.3561759
2011-03-08
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of GaAs surface structure on tunneling anisotropic magnetoresistance and magnetocrystalline anisotropy in epitaxial Co50Fe50/n-GaAs junctions
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/10/10.1063/1.3561759
10.1063/1.3561759
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