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Surface band bending and electron affinity as a function of hole accumulation density in surface conducting diamond
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10.1063/1.3561760
/content/aip/journal/apl/98/10/10.1063/1.3561760
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/10/10.1063/1.3561760
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(open squares before and filled squares after binding energy corrections), work function (open diamonds), and electron affinity (filled circles); (a) as a function of hole density for atmosphere induced SC, (b) as a function of coverage and hole density for induced SC. The broken line, which refers to the left hand energy scale only, represents the VBM position (see Ref. 6).

Image of FIG. 2.
FIG. 2.

(a) Schematic electron potential profile (band diagram) of H-terminated diamond transfer doped by ; left panel: very low coverage, right panel: coverage corresponding to saturated hole density. (b) Electron affinity (data points) as a function of hole sheet density. Solid line is a linear fit of the data. (c) as a function of hole sheet density.

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/content/aip/journal/apl/98/10/10.1063/1.3561760
2011-03-07
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Surface band bending and electron affinity as a function of hole accumulation density in surface conducting diamond
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/10/10.1063/1.3561760
10.1063/1.3561760
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