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Schematic of the coordinate system used in this study.
Examples of calculated as a function of substrate orientation. Calculations were performed for -QWs with various well widths that were coherently grown on GaN substrates. The broken lines show the results calculated using Eq. (1) and the solid lines show the numerical results calculated without using the approximations we assumed to derive the analytical expression. The valence-band parameters of GaN (in Refs. 22 and 23) were used in the calculation as InGaN material parameters.
Correlation between the reported polarization degree and for non--oriented InGaN QWs (Refs. 10, 12, 13, 18, and 19). The solid line is the theoretical curve.
Previously reported experimental data for for (a) (Refs. 7, 10–14, 18, 19, 25, and 26) and (b) (Refs. 14, 18, 19, 25, and 26) InGaN QWs as a function of substrate orientation. The solid lines are theoretical curves and fit to the data.
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