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Polarity effects in the x-ray photoemission of ZnO and other wurtzite semiconductors
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10.1063/1.3562308
/content/aip/journal/apl/98/10/10.1063/1.3562308
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/10/10.1063/1.3562308

Figures

Image of FIG. 1.
FIG. 1.

The Zn-polar (0001) and O-polar hydroxyl-terminated faces of wurtzite ZnO.

Image of FIG. 2.
FIG. 2.

core-level XPS spectra (pass ) taken at incident photon energies from 1486 to 600 eV on the Zn-polar, O-polar, and -plane faces of organic-solvent cleaned HT ZnO.

Image of FIG. 3.
FIG. 3.

VB-XPS spectra (pass ) from the polar and nonpolar faces of HT and PM bulk ZnO measured using [(a)–(d)] radiation (1486.6 eV) and [(e) and (f)] synchrotron radiation (1486 to 150 eV). The spectra in [(b) and (d)] were collected at a take-off angle .

Image of FIG. 4.
FIG. 4.

VB-XPS spectra from the polar faces of (a) CdS and (b) CdSe c-axis single crystals, measured using radiation.

Tables

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Table I.

XPS quantification analysis of the organic-solvent cleaned Zn-polar, O-polar, and -plane faces of HT ZnO before and after 20 min ROP exposure.

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/content/aip/journal/apl/98/10/10.1063/1.3562308
2011-03-09
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Polarity effects in the x-ray photoemission of ZnO and other wurtzite semiconductors
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/10/10.1063/1.3562308
10.1063/1.3562308
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