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High-performance metal-semiconductor-metal InGaN photodetectors using as the insulator
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10.1063/1.3562326
/content/aip/journal/apl/98/10/10.1063/1.3562326
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/10/10.1063/1.3562326
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(0002)-plane HRXRD scan and -plane HRXRD reciprocal space mapping for InGaN/GaN sample.

Image of FIG. 2.
FIG. 2.

(a) The typical dark characteristics for MSM PD without insulator (sample A) and with insulator (sample B). The black solid line is the fitted result by using different models of current transport mechanism. (b) characteristics and responsivity of sample B in the dark and upon 338 nm light illumination (power ). The inset shows the responsivity dependence on the applied voltage.

Image of FIG. 3.
FIG. 3.

(a) Time response of sample B upon 350 nm light illumination measured by a mechanical chopping method and (b) transient response time measurement for sample B at bias voltage of 0.1 and 5 V with a chopping frequency of 100 Hz.

Image of FIG. 4.
FIG. 4.

Photocurrent spectra measured under the illumination of xenon lamp at the applied voltage of 1 V.

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/content/aip/journal/apl/98/10/10.1063/1.3562326
2011-03-08
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-performance metal-semiconductor-metal InGaN photodetectors using CaF2 as the insulator
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/10/10.1063/1.3562326
10.1063/1.3562326
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