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(0002)-plane HRXRD scan and -plane HRXRD reciprocal space mapping for InGaN/GaN sample.
(a) The typical dark characteristics for MSM PD without insulator (sample A) and with insulator (sample B). The black solid line is the fitted result by using different models of current transport mechanism. (b) characteristics and responsivity of sample B in the dark and upon 338 nm light illumination (power ). The inset shows the responsivity dependence on the applied voltage.
(a) Time response of sample B upon 350 nm light illumination measured by a mechanical chopping method and (b) transient response time measurement for sample B at bias voltage of 0.1 and 5 V with a chopping frequency of 100 Hz.
Photocurrent spectra measured under the illumination of xenon lamp at the applied voltage of 1 V.
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