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Distribution of bismuth atoms in epitaxial GaAsBi
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10.1063/1.3562376
/content/aip/journal/apl/98/10/10.1063/1.3562376
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/10/10.1063/1.3562376

Figures

Image of FIG. 1.
FIG. 1.

(a) Low magnification Z-contrast cross-section image of the interface GaAs/GaAsBi ([110] zone axis). The region marked with dashed lines is magnified in (b). (b) High resolution Z-contrast image of the GaAsBi layer showing the dumbbells typically found in [110] view, where right columns correspond to Ga atoms and left ones (brighter contrast) to As/Bi. (c) -values corresponding to each dumbbell represented with colored dots over the Z-contrast image. Higher values (hot colors) can be interpreted as atomic columns with higher Bi content, while deep blue is considered to represent a pure As column. Red and yellow circles indicate high probability of nanoclustering sites.

Image of FIG. 2.
FIG. 2.

White columns show the histogram of the Bi distribution per atomic column in the layer estimated from Fig. 1(c), considering the association of ranges of equidistant values of and the number of Bi atoms per column shown in Table I. Dark columns correspond to a random arrangement of Bi atoms as described by the binomial probability density function.

Tables

Generic image for table
Table I.

Assignment of -values ranges to the estimated Bi content per column considering the linear dependency , the measured sample thickness and the layer mean Bi content.

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/content/aip/journal/apl/98/10/10.1063/1.3562376
2011-03-07
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Distribution of bismuth atoms in epitaxial GaAsBi
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/10/10.1063/1.3562376
10.1063/1.3562376
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